Hydrogen getter for integrated microelectronic assembly

A component for forming a sealed package that includes a microelectronic device, comprising:

• a housing member, and
• sequentially deposited layers of metal layers attached to the housing member, to be positioned within the package when components of the package are assembled to form the package, said sequentially deposited layers of metal layers comprising a first layer of a first metal, closest to the housing member, adhering to the housing member and which traps hydrogen;
• a second layer further from the housing member than the first layer, said second layer being of a second metal for absorbing larger amounts of hydrogen than trapped by said first layer, said second layer being adjacent the first layer;
• and an outermost layer of a third metal that converts hydrogen molecules to hydrogen atoms and also absorbs hydrogen, adjacent the second layer, the first, second and third metals being different metals.

A component for forming a sealed package that includes a microelectronic device, comprising:

• a housing member;
• and
• sequentially deposited layers of metal layers, attached to the housing member, to be positioned within the package when components of the package are assembled to form the package, said sequentially deposited layers of metal layers including a first layer, closest to the housing member, of nickel;
• a second layer, of a material selected from the group consisting of titanium and zirconium, adjacent the first layer, of nickel;
• and an outermost layer, of palladium, the second layer being adjacent the outermost layer and between the first layer and the outermost layer.

A packaged microelectronic device, comprising:

• a plurality of components for toning a sealed package, the plurality of components including a container for holding a microelectronic device and a lid, and
• said microelectronic device, which is a pseudomorphic high electron mobility transistor having a thin nitride passivation film which is sufficiently thin so as to be susceptible to hydrogen penetration, said microelectronic device being adhered to a bottom of said container, the lid being sealed to the container by an air-tight seal, wherein the package contains a component comprising sequentially deposited layers of metal layers attached to the inside of the container, said sequentially deposited layers of metal layers comprising a first layer of a first metal, closest to the container, adhering to the container and which traps hydrogen;
• a second layer further from the container than the first layer, said second layer being of a second metal for adsorbing larger amounts of hydrogen than trapped by said first layer;
• and an outermost layer of a third metal that converts hydrogen melecules to hydrogen atoms and also absorbs hydrogen, adjacent the second layer, the first, second and third metals being different metals.

A packaged microelectronic device, comprising:

• a plurality of components forming a sealed package, the plurality of components including a container for holding a microelectronic device and a lid, and
• said microelectronic device, which is a pseudomorphic high electron mobility transistor having a thin nitride passivation film which is sufficiently thin so as to be susceptible to hydrogen penetration, said microelectronic device being adhered to a bottom of said container, the lid being sealed to the container by an air-tight seal, wherein the sealed package includes therein a component comprising sequentially deposited layers of metal layers, attached to the inside of the container, said sequentially deposited layers of metal layers including a first layer, closest to the container, of nickel;
• a second layer, of a material selected from the group consisting of titanium and zirconium;
• and an outermost layer, of palladium, the second layer being adjacent the outermost layer and between the first layer and the outermost layer.