Optical semiconductor device and a method of manufacturing the same

An optical semiconductor device comprising:

• a substrate having an opening, in a form of a container;
• a conductive layer of said substrate which is formed on a bottom surface of said substrate;
• a plurality of external electrodes which are formed on an external surface of said substrate and to be electrically connected to an external circuit;
• a light emitting device or photodetector which is mounted on said conductive layer of said substrate and electrically connected to said conductive layer and said external electrodes;
• a cap which is fixed to an opening of said substrate;
• a conductive layer of said cap which is formed on a surface of said cap facing said light emitting device or photodetector on said bottom surface of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said cap, and electrically connected to said conductive layer of said cap and said plurality of external electrodes, and which faces said light emitting device or photodetector mounted on said bottom surface of said substrate, wherein:
• at least one through hole for said cap, for connecting said conductive layer of said cap and said plurality of electrodes, is formed in said substrate;
• and
• said at least one through hole for said cap is filled with a conductive material.

An optical semiconductor device comprising:

• a substrate having an opening, in a form of a container;
• a conductive layer of said substrate which is formed on a bottom surface of said substrate;
• a plurality of external electrodes which are formed on an external surface of said substrate and to be electrically connected to an external circuit;
• a light emitting device or photodetector which is mounted on said conductive layer of said substrate and electrically connected to said conductive layer and said external electrodes;
• a cap which is fixed to an opening of said substrate;
• a conductive layer of said cap which is formed on a surface of said cap facing said light emitting device or photodetector on said bottom surface of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said cap, and electrically connected to said conductive layer of said cap and said plurality of external electrodes, and which faces said light emitting device or photodetector mounted on said bottom surface of said substrate, wherein:
• said substrate has a multi-layer structure;
• a first conductive layer is formed on a predetermined layer of said substrate;
• said light emitting device or photodetector is formed on said first conductive layer;
• a second conductive layer is formed on a layer being at the same height as a height of a surface of said light emitting device or photodetector formed on said first conductive layer;
• and
• said light emitting device or photodetector and said second conductive layer are electrically connected with each other through a bonding wire.

An optical semiconductor device comprising:

• a substrate having an opening, in a form of a container;
• a conductive layer of said substrate which is formed on a bottom surface of said substrate;
• a plurality of external electrodes which are formed on an external surface of said substrate and to be electrically connected to an external circuit;
• a light emitting device or photodetector which is mounted on said conductive layer of said substrate and electrically connected to said conductive layer and said external electrodes;
• a cap which is fixed to an opening of said substrate;
• a conductive layer of said cap which is formed on a surface of said cap facing said light emitting device or photodetector on said bottom surface of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said cap, and electrically connected to said conductive layer of said cap and said plurality of external electrodes, and which faces said light emitting device or photodetector mounted on said bottom surface of said substrate, wherein:
• said plurality of external electrodes are formed on the external surface of said substrate, and on an external surface of said cap;
• said plurality of external electrodes which are formed on the external surface of said substrate, and said plurality of external electrodes which are formed on the external surface of said cap are arranged on a same plane;
• a plurality of external electrodes which are formed on the external surface of said substrate are electrically connected to said light emitting device or photodetector on said conductive layer for substrate;
• and
• said plurality of external electrodes which are formed on the external surface of said cap are electrically connected to said photodetector or light emitting device on said conductive layer for said cap.

An optical semiconductor comprising:

• a wiring substrate, on which a conductive layer of said substrate have a predetermined wiring pattern is formed, and which has a plurality of openings in predetermined positions;
• a plurality of external electrodes which are formed on an external surface of said wiring substrate and to be electrically connected to an external circuit;
• a light-emitting device or photodetector which is mounted on said conductive layer and said external electrodes;
• a plurality of caps, each including a top surface and a lower surface,
• wherein the lower surface of at least one of the plurality of caps includes a substantially continuously planar surface section which overlays at least one of the openings of said substrate and extends beyond the at least one of the openings;
• a conductive layer of at least one of said plurality of caps which is formed on the lower surface of said at least one of said plurality of caps facing said light emitting device or photodetector on said conductive layer of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said at least one of said plurality of caps, and electrically connected to said conductive layer of said cap and said plurality of external electrodes, and which faces said light emitting device of photodetector mounted on said substrate.

An optical semiconductor comprising:

• a wiring substrate, on which a conductive layer of said substrate have a predetermined wiring pattern is formed, and which has a plurality of openings in predetermined positions;
• a plurality of external electrodes which are formed on an external surface of said wiring substrate and to be electrically connected to an external circuit;
• a light-emitting device or photodetector which is mounted on said conductive layer and said external electrodes;
• caps, which are each fixed to one of the openings of said substrate;
• a conductive layer of at least one of said caps which is formed on a surface of said at least one of said caps, facing said light emitting device or photodetector on said conductive layer of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said at least one of said caps, and electrically connected to said conductive layer of said at least one of said caps and said plurality of external electrodes, and which faces said light emitting device of photodetector mounted on said substrate, further comprising:
• at least one through hole for said at least one of said caps, for connecting said conductive layer of said at least one of said caps and said plurality of electrodes, is formed in said substrate;
• and
• said at least one through hole for said at least one of said caps is filled with a conductive material.

An optical semiconductor comprising:

• a wiring substrate, on which a conductive layer of said substrate have a predetermined wiring pattern is formed, and which has a plurality of openings in predetermined positions;
• a plurality of external electrodes which are formed on an external surface of said wiring substrate and to be electrically connected to an external circuit;
• a light-emitting device or photodetector which is mounted on said conductive layer and said external electrodes;
• caps, which are each fixed to one of the openings of said substrate;
• a conductive layer of at least one of said caps which is formed on a surface of at least one of said caps facing said light emitting device or photodetector on said conductive layer of said substrate;
• and
• a photodetector or light emitting device, which is mounted on said conductive layer of said at least one of said caps, and electrically connected to said conductive layer of said at least one of said caps and said plurality of external electrodes, and which faces said light emitting device of photodetector mounted on said substrate, wherein:
• said substrate has a multi-layer structure;
• a first conductive layer is formed on a predetermined layer of said substrate;
• a second conductive layer is formed on a layer being at a same height as a height of a top surface of said light emitting device or photodetector formed on said first conductive layer;
• and
• said light emitting device or photodetector formed on second conductive layer are electrically connected through a bonding wire.

An optical semiconductor device comprising:

• a concave substrate having a plurality of openings in predetermined positions;
• a first conductive layer having a predetermined wiring pattern disposed on an interior surface of said concave substrate;
• a plurality of external electrodes disposed on an external surface of said concave substrate, the external electrodes being electrically connected to an external circuit;
• a first optical element disposed on said first conductive layer of said concave substrate, the first optical element being selected from the group consisting of a light emitting device and a photodetector, and being electrically connected to said first conductive layer of said concave substrate and to said plurality of external electrodes;
• a substantially horizontal cap which is fixed to a top surface of said concave substrate;
• a second conductive layer having a predetermined wiring pattern disposed on a surface of said cap facing said interior surface of said concave substrate;
• and
• a second optical element disposed on said second conductive layer of said cap, the second optical element being selected from the group consisting of a light emitting device and a photodetector, and being electrically connected to said second conductive layer of said cap and to said plurality of external electrodes;
• wherein said first conductive layer of said concave substrate is electrically connected to said plurality of external electrodes through at least one first through-hole which comprises a first corresponding one of said openings in said concave substrate and which is filled with a conductive material, and wherein said second conductive layer of said cap is electrically connected to said plurality of external electrodes through at least one second through-hole, which comprises a second corresponding one of said openings in said concave substrate and which is filled with a conductive material.