Storage capacitor for a DRAM
AssigneeInfineon Technologies AG
InventorsHans Reisinger, Volker Lehmann, Reinhard Stengl, Hermann Wendt, Gerrit Lange, Harald Bachhofer, Martin Franosch, Herbert Schäfer
Life of this patent
Estimating the term…
Abstract
A storage capacitor for a DRAM has a dielectric composed of silicon nitride and has at least two electrodes disposed opposite one another across the dielectric. A material having a high tunneling barrier between the Fermi level of the material and the conduction band of the dielectric is used for the electrodes. Suitable materials for the electrodes are metals such as platinum, tungsten and iridium or silicides.
Claims6
A storage capacitor for a dynamic random access memory, comprising:
- a first electrode composed of a material selected from the group consisting of iridium and iridium silicide;
- at least one second electrode;
- and
- a dielectric composed of silicon nitride and provided between said first electrode and said at least one second electrode.
A storage capacitor for a dynamic random access memory, comprising:
- a first electrode composed of tungsten or tungsten silicide;
- at least one second electrode;
- and
- a dielectric composed of silicon nitride and provided between said first electrode and said at least one second electrode.
Dependencies are inferred from the claim text.