Organic anti-reflective coating polymer and preparation thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin-Ho Jung, Sung-Eun Hong, Jae-Chang Jung, Geun-Su Lee, Ki-Ho Baik
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AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin-Ho Jung, Sung-Eun Hong, Jae-Chang Jung, Geun-Su Lee, Ki-Ho Baik
Estimating the term…
The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.
A polymer of the formula:
A method for preparing a polymer of the formula:
A polymer of the formula:
A method for producing a polymer of the formula:
An anti-reflective coating composition comprising a polymer selected from:
A method for preparing an anti-reflective coating on a substrate, said method comprising the steps of:
Dependencies are inferred from the claim text.