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US 6,548,420 B2Granted
Measurement and analysis of mercury-based pseudo-field effect transistors
AssigneeInternational Business Machines Corporation
InventorHarold J. Hovel
Life of this patent
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Abstract
Procedures, analysis techniques, and correction methods are presented for assessing the electrical properties of the Si layer of silicon-on-insulator substrates. Detailed analysis and equations are outlined in a computer algorithm written in Mathcad for both the linear and saturated regions of FET behavior.
Claims20
A method for analyzing and determining electrical parameters of a liquid metal-based pseudo-FET made on a silicon-on-insulator substrate comprising:
- creating an ohmic gate contact to a substrate side of a test sample of the silicon-on-insulator substrate;
- treating a Si film surface of said test sample to remove native oxide and reduce surface states;
- contacting said Si film surface with two liquid metallic electrodes which act as source and drain electrodes;
- placing a low bias drain voltage in the range of 50 to 300 millivolts between said source and drain electrodes;
- placing a varying voltage bias on said gate contact, varying from a negative value greater than an FET flat band voltage to a positive value greater than an inversion threshold voltage;
- recording values of the drain current at each said gate voltage;
- and
- performing an analysis of said drain voltage versus gate voltage measurements to determine electrical parameters of the liquid metal based pseudo-FET made on a silicon-on-insulator substrate.
5 more elements
A method for analyzing and determining electrical parameters of a liquid metal-based pseudo-FET made on a silicon-on-insulator substrate comprising:
- creating an ohmic gate contact to a substrate side of a test sample of the silicon-on-insulator substrate;
- treating a Si film surface of said test sample to remove native oxide and reduce surface states;
- contacting said Si film surface with two liquid metallic electrodes which act as source and drain electrodes;
- placing a low bias drain voltage in the range of 50 to 300 millivolts between said source and drain electrodes;
- placing a plurality of fixed voltage biases on said gate contact, while applying sufficient voltage biases on said drain electrode to produce saturation drain current behavior;
- recording values of the drain current at each said gate voltage and each drain voltage;
- and
- performing an analysis of said drain voltage versus gate voltage measurements to determine electrical parameters of the liquid metal based pseudo-FET made on a silicon-on-insulator substrate.
5 more elements
Dependencies are inferred from the claim text.