Method of forming patterned thin film
AssigneeNational Institute for Materials Science
InventorsHiroshi Fudoji, Mikihiko Kobayashi, Norio Shinya
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Abstract
A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.
Claims13
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- forming an electric charge pattern on the insulating substrate;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- forming an electric charge pattern on the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- forming an electric charge pattern on the insulating substrate;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- forming an electric charge pattern on the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- applying a focused ion beam or a focused electron beam to a surface of the insulating substrate to form an electric charge pattern on said insulating substrate in a non-contact manner;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- applying a focused ion beam or a focused electron beam to a surface of the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film, to form an electric charge pattern on said insulating substrate in a non-contact manner;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- applying a focused ion beam or a focused electron beam to a surface of the insulating substrate to form an electric charge pattern on said insulating substrate in a non-contact manner;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- applying a focused ion beam or a focused electron beam to a surface of the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film, to form an electric charge pattern on said insulating substrate in a non-contact manner;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- bringing one of a metal probe and a microstamp into contact with a surface of the insulating substrate to form an electric charge pattern on said insulating substrate;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- bringing one of a metal probe and a microstamp into contact with a surface of the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film, to form an electric charge pattern on said insulating substrate;
- and
- dipping said insulating substrate in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- bringing one of a metal probe and a microstamp into contact with a surface of the insulating substrate to form an electric charge pattern on said insulating substrate;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
A method of forming a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, said method comprising the steps of:
- bringing one of a metal probe and a microstamp into contact with a surface of the insulating substrate, which is one selected from the group consisting of a silicon wafer, a glass, and a mica cleavage plane, each of which has a flat surface provided with a thermally oxidized film or an insulating dielectric film, to form an electric charge pattern on said insulating substrate;
- and
- dipping said insulating substrate in the precursor solution containing the film-forming substance, which is one selected from the group consisting of a metal alkoxide, a metal acetyl acetate, and a metal carboxylate, to deposit the film-forming substance on the electric charge pattern formed on said insulating substrate.
Dependencies are inferred from the claim text.