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US 6,548,409 B1Granted
Method of reducing micro-scratches during tungsten CMP
AssigneeSilicon Integrated Systems Corp.
InventorsShyh-Dar Lee, Chun-Feng Nien
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Abstract
A method of reducing micro-scratches during tungsten CMP. Tungsten CMP with a standard tungsten slurry is first provided on the exposed surfaces of a tungsten plug and a IMD layer on a semiconductor substrate. The tungsten CMP with an oxide slurry is then provided on the polished surfaces of the tungsten plugs and the IMD layer.
Claims6
A method of reducing micro-scratches during tungsten CMP, comprising steps of:
- providing a semiconductor substrate having at least a tungsten plug and an inter-metal dielectric (IMD) layer;
- performing tungsten CMP with a standard tungsten slurry on the exposed surfaces of the tungsten plugs and the IMD layer;
- and
- performing tungsten CMP with an oxide slurry on the polished surfaces of the tungsten plugs and the IMD layer.
1 more element
Dependencies are inferred from the claim text.