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US 6,548,395 B1Granted
Method of promoting void free copper interconnects
AssigneeAdvanced Micro Devices, Inc.
InventorsChristy Mei-Chu Woo, Pin-Chin Connie Wang
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Abstract
Cu or a Cu alloy is deposited to partially fill openings in a dielectric layer and then annealed. Incomplete filling leaves room in the openings to accommodate a volume change associated with grain growth and, hence, prevents the generation of voids. The openings are then completely filled, annealed a second time and then planarized, as by CMP. Embodiments include partially filling about 70% to about 90% of the volume of the trenches and then annealing before completely filling the trenches.
Claims20
A method of manufacturing a semiconductor device, the method comprising sequentially:
- forming a plurality of openings in a dielectric layer;
- depositing a layer of metal partially filling the openings;
- annealing to effect grain growth of the metal deposited in the openings;
- and
- depositing a layer of metal to completely fill the openings.
2 more elements
Dependencies are inferred from the claim text.