Method for performing lithographic process to a multi-layered photoresist layer
AssigneeMacronix International Co., Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A method for performing lithographic process to a multi-layered photoresist layer. The method at least includes the following steps. First of all, a substrate is provided. Then, a first photoresist film is formed on the substrate, and a mask layer is formed on the first photoresist film, wherein the mask layer is different from the first photoresist film. Next, a second photoresist film is formed on the mask layer, and a pattern is transferred into the second photoresist film by using lithographic process. Then, the mask layer is etched by using the second photoresist film as a first mask such that the pattern is transferred into layer. Finally, the pattern is transferred into the first photoresist film by using the mask layer as a second mask.
Claims10
A method for forming a photoresist pattern, the method comprising the steps of:
- providing a substrate;
- forming a first photoresist film on said substrate;
- forming a mask layer on said first photoresist film, wherein said layer is different from said first photoresist film;
- forming a second photoresist film on said mask layer;
- transferring a pattern into said second photoresist film by using a lithographic process;
- etching said mask layer by using said second photoresist film as a first mask such that said pattern is transferred into said mask layer;
- transferring said pattern into said first photoresist film by using said mask layer as a second mask;
- etching said substrate by using said first photoresist film as a third mask;
- and removing said second photoresist film from said mask layer.
Dependencies are inferred from the claim text.