US 6,548,360 B2 · Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same

Abstract

An electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the apparatus. Using silicon on insulator technique, a bottom layer, a P-well, a first source/drain region, a second source/drain region and a gate are formed. A selective epitaxial growth region is selectively formed on the first source/drain region, and an N+ region is formed on the bottom layer. The lower portion of the N+ region is then adjacent to the P-well, and the upper portion of the N+ region is adjacent to the gate. Thus, a PNPN silicon control rectifier is formed, and the silicon on insulation CMOS technique is effectively transplanted into the electrostatic discharge apparatus.

Claims9

Dependent claims

A method of fabricating an electrostatic discharge protection providing a substrate layer;

forming an insulation layer on the substrate layer;
forming a P-well on the insulation layer;
forming a gate, a first and a second source/drain region, wherein the gate is formed on the P-well, while the first and the second source/drain regions are formed in the P-well with the gate
forming a selective epitaxial growth region protruding from the first source/drain region next to the gate;
and
forming an N-type region adjacent to the second source/drain region, the N-type region located in and protruding from the P-well with a bottom portion adjacent to the insulation layer and a top portion adjacent to the gate.

3 more elements

Dependencies are inferred from the claim text.

Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same

Life of this patent

Electrostatic discharge protection apparatus with silicon control rectifier and the method of fabricating the same

Life of this patent

Abstract

Claims9