Method for fabricating semiconductor capacitor
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSoon-Hong Hwang
Life of this patent
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Abstract
A method of fabricating a semiconductor capacitor is disclosed. An impurity layer is formed on a semiconductor substrate. An interlayer insulating film is disposed on an upper surface of the impurity layer and the semiconductor substrate. A contact hole is selectively etched through the interlayer insulating film to the impurity layer. A conductive plug is formed in the contact hole. A metal film pattern having an irregular surface area is disposed on the conductive plug. A dielectric substance film is located directly on the irregular surface of the metal film pattern. A metal electrode is formed on the dielectric substance film.
Claims18
A method of fabricating a semiconductor capacitor, comprising:
- forming an impurity layer on a semiconductor substrate;
- forming an interlayer insulating film on an upper surface of the impurity layer and the semiconductor substrate;
- forming a contact hole through the interlayer insulating film to the impurity layer;
- forming a conductive plug in the contact hole;
- forming a metal film pattern on the conductive plug;
- forming an irregular surface on the metal film pattern subsequent to forming the metal film pattern;
- forming a dielectric substance film on the irregular surface on the metal film patter;
- and
- forming a metal electrode on the dielectric substance film.
A method of fabricating a semiconductor capacitor, comprising:
- forming an impurity layer on a semiconductor substrate;
- forming an interlayer insulating film on an upper surface of the impurity layer and the semiconductor substrate;
- forming a contact hole through the interlayer insulating film to the impurity layer;
- forming a conductive plug in the contact hole;
- forming a metal film pattern on the conductive plug;
- forming an irregular surface on the metal film pattern;
- forming a dielectric substance film on the irregular surface on the metal film pattern;
- and
- forming a metal electrode on the dielectric substance film
- wherein forming the irregular surface on the metal film pattern further comprises;
- forming a polysilicon layer on the surface of the metal film pattern;
- forming a silicide layer by a silicide reaction at an interface between the polysilicon layer and the metal film pattern;
- removing the polysilicon layer;
- and
- removing the silicide layer.
A method of fabricating a semiconductor capacitor having a substrate and an impurity layer on the substrate, the method comprising:
- forming a conductive plug in contact with the impurity layer;
- forming a metal film pattern on the conductive plug, the metal film pattern having an irregular surface that is formed subsequent to forming the metal film pattern;
- and
- forming a dielectric substance film on the metal film pattern.
Dependencies are inferred from the claim text.