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US 6,548,335 B1Granted
Selective epitaxy to reduce gate/gate dielectric interface roughness
AssigneeAdvanced Micro Devices, Inc.
InventorsCarl Robert Huster, Concetta Riccobene, Scott Luning
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Abstract
Channel carrier mobility is increased by reducing gate/gate dielectric interface roughness, thereby reducing surface scattering. Embodiments include depositing a layer of silicon by selective epitaxy prior to gate oxide formation to provide a substantially atomically smooth surface resulting in a smoother interface between the gate polysilicon and silicon oxide after oxidation.
Claims10
A method of manufacturing a semiconductor device, the method comprising:
- forming a field dielectric region isolating an active region in a semiconductor substrate;
- growing a layer of semiconductor material in the active region by selective epitaxy at a thickness of about 5 Å to about 10 Å;
- thermally oxidizing a surface of the epitaxially grown layer to form a gate oxide layer;
- and
- depositing a gate electrode layer on the gate oxide layer.
2 more elements
Dependencies are inferred from the claim text.