Manufacturing method of semiconductor integrated circuit devices and mask manufacturing methods

A method of manufacturing a semiconductor integrated circuit device, the method comprising the steps of:

• (a) calculating a light intensity of a mask pattern in consideration of aberration of a lens by using wavefront aberration data of a lens of a pattern exposure device or aberration data equivalent to the same;
• (b) comparing results of the light intensity calculation in step (a) with results of a light intensity calculation of the mask pattern on condition that there is no aberration of the lens;
• (c) when an abnormality of a predetermined pattern of the mask exceeds an allowable range as indicated by a result of the comparison in step (b), automatically calculating a pattern correction amount to ensure that the allowable range is not exceeded, and automatically correcting data of the mask pattern according to a result of said pattern correction amount calculation;
• (d) manufacturing a mask according to the mask pattern data as automatically corrected in step (c);
• and
• (e) transferring a pattern of the mask manufactured by step (d) to a semiconductor wafer by using the pattern exposure device.

A method of manufacturing a semiconductor integrated circuit device, the method comprising the steps of:

• (a) calculating a light intensity of a mask pattern in consideration of aberration of a lens by using wavefront aberration data of a lens of a pattern exposure device or an aberration data equivalent to the same;
• (b) comparing results of the light intensity calculation in step (a) with results of a light intensity calculation of the mask pattern on condition that there is no aberration of the lens;
• (c) determining whether an abnormality of a predetermined pattern of the mask exceeds an allowable range as indicated by a result of the comparison in step (b) and, if said abnormality exceeds said allowable range, automatically calculating a pattern correction amount to ensure that the allowable range is not exceeded and automatically correcting data of the mask pattern according to a result of said pattern correction amount calculation;
• (d) manufacturing a mask according to the mask pattern data, including any correction made in step (c);
• and
• (e) transferring a pattern of the mask manufactured by step (d) to a semiconductor wafer by using the pattern exposure device.