Method of and apparatus for developing exposed photoresist to prevent impurity from being attached to wafer surface
AssigneeNEC Corporation
InventorAkira Mutoh
Life of this patent
Estimating the term…
Abstract
After a silicon wafer is held horizontally such that a surface thereof coated with a photoresist faces upwardly, the surface of the silicon wafer is supplied with a cleaning liquid to form a puddle thereof before a developing liquid is supplied. After the puddle of the cleaning liquid is formed, the silicon wafer starts to be rotated and the developing liquid starts to be supplied to the surface of the silicon wafer. The developing liquid is supplied to the surface of the silicon wafer with the puddle of the cleaning liquid being formed thereon. Alternatively, developing liquid is supplied to the surface of the silicon wafer which is being supplied with cleaning liquid while the silicon wafer is being rotated.
Claims12
A method of developing an exposed photoresist coated on a surface of a silicon wafer with a developing liquid, comprising the steps of:
- holding the silicon wafer horizontally such that the surface coated with the photoresist faces upwardly;
- rotating the silicon wafer, and supplying a cleaning liquid to the surface of the silicon wafer thus held while decelerating the rotation of the silicon wafer, and thereafter, stopping the supply of the cleaning liquid when the rotation of the silicon wafer reaches a predetermined speed, to form a puddle of said cleaning liquid before the developing liquid is supplied to the surface of the silicon wafer;
- and
- rotating the silicon wafer while maintaining said puddle of the cleaning liquid formed thereon in a horizontal plane, and supplying said developing liquid to the surface of the silicon wafer containing said cleaning liquid.
A method of developing an exposed photoresist coated on a surface of a silicon wafer with a developing liquid, comprising the steps of:
- holding the silicon wafer horizontally such that the surface coated with the photoresist faces upwardly;
- rotating the silicon wafer thus held before the developing liquid is supplied to the surface of the silicon wafer, and supplying a cleaning liquid to the surface of the silicon wafer;
- and
- supplying said developing liquid to the surface of the silicon wafer which is being supplied with said cleaning liquid while the silicon wafer is being rotated.
A method of developing an exposed photoresist coated on a surface of a silicon wafer with a developing liquid, the method comprising:
- holding the silicon wafer horizontally such that the surface coated with the photoresist faces upwardly;
- supplying a cleaning liquid to the surface of the silicon wafer thus held to form a puddle of said cleaning liquid before the developing liquid is supplied to the surface of the silicon wafer;
- prior to supplying a cleaning liquid, rotating the silicon wafer;
- decelerating rotation of the silicon wafer while applying the cleaning liquid;
- and
- rotating the silicon wafer while maintaining said puddle of the cleaning liquid formed thereon in a horizontal plane, and supplying said developing liquid to the surface of the silicon wafer containing said cleaning liquid.
A method of developing an exposed photoresist coated on a surface of a silicon wafer with a developing liquid comprising:
- holding the silicon wafer horizontally such that the surface coated with the photoresist faces upwardly;
- supplying a cleaning liquid to the surface of the silicon wafer thus held to form a puddle of said cleaning liquid before the developing liquid is supplied to the surface of the silicon wafer;
- rotating the silicon wafer while maintaining said puddle of the cleaning liquid formed thereon in a horizontal plane, and supplying said developing liquid to the surface of the silicon wafer containing said cleaning liquid;
- and
- while supplying said developing liquid, gradually accelerating rotation of the silicon wafer and then gradually decelerating rotation of the silicon wafer.
Dependencies are inferred from the claim text.