Method and apparatus for processing semiconductor substrates

An apparatus for processing a workpiece for producing semiconductor devices, comprising:

• a processing chamber that mounts the workpiece, the processing chamber including an interior component having an inner periphery that surrounds the workpiece, and a stepped surface region in a vicinity of the inner periphery, the stepped surface region including a plurality of sectioned areas divided by steps;
• wherein:
• the workpiece is processed in the processing chamber while forming a film of deposited material on the stepped region;
• and
• the stepped surface region is provided only in the vicinity of the inner periphery of the interior component.

An apparatus for processing a workpiece for producing semiconductor devices, comprising:

• a processing chamber that mounts the workpiece, the processing chamber including an interior component having an inner periphery that surrounds the workpiece, and a stepped surface region in a vicinity of the inner periphery, the stepped surface region including a plurality of sectioned areas divided by at least one groove;
• wherein:
• the workpiece is processed in the processing chamber while supplying a gas onto the workpiece and forming a film of deposited material on the stepped surface region;
• and
• a depth of the groove is sufficiently large so that the film is effectively divided and is sufficiently small so that the groove does not disturb a flow of the gas.

An apparatus for processing a workpiece for producing semiconductor devices, comprising:

• a processing chamber that mounts the workpiece, the processing chamber including an interior component having an inner periphery that surrounds the workpiece, and a stepped surface region in a vicinity of the inner periphery, the stepped surface region including a plurality of sectioned areas divided by at least one groove;
• wherein:
• the workpiece is processed in the processing chamber while forming a film of deposited material on the stepped surface region and
• the groove is arranged only in the vicinity of the inner periphery of the interior component.

An interior component of a processing chamber for processing a semiconductor substrate, comprising:

• a stepped region formed in a vicinity of an inner periphery of the interior component where a film of deposited material is formed during the processing of the semiconductor substrate, the inner periphery surrounding the substrate, the stepped region including a plurality of sectioned areas divided by steps;
• wherein:
• the processing chamber includes electrodes for generating a plasma, the interior component concentrates the plasma in a space between the electrodes;
• and
• the steps are sufficiently high so that the film is effectively divided and are sufficiently low so that the steps do not disturb a flow of a gas supplied onto the semiconductor substrate during the processing.

An interior component of a processing chamber for processing a semiconductor substrate, comprising:

• a stepped region formed in a vicinity of an inner periphery of the interior component that surrounds the substrate, the stepped region including a plurality of sectioned areas divided by steps;
• wherein:
• the processing chamber includes electrodes for generating a plasma, the interior component concentrates the plasma in a space between the electrodes;
• and
• the stepped region is provided only in the vicinity of the inner periphery.

An interior component of a processing chamber for processing a semiconductor substrate, comprising:

• a stepped region formed in a vicinity of an inner periphery of the interior component where a film of deposited material is formed during a processing of the semiconductor substrate, the inner periphery surrounding the substrate, the stepped region including a plurality of raised sections divided by at least one groove;
• wherein:
• the processing chamber includes electrodes for generating a plasma, the interior component concentrates the plasma in a space between the electrodes;
• and
• a depth of the groove is sufficiently large to effectively divide the deposited film and is sufficiently small so that the groove does not disturb a flow of a gas supplied onto the semiconductor substrate during the processing.

An interior component of a processing chamber for processing a semiconductor substrate, comprising:

• a stepped region formed in a vicinity of an inner periphery of the interior component that surrounds the substrate, the stepped region including a plurality of raised sections divided by at least one groove;
• wherein:
• the processing chamber includes electrodes for generating a plasma, the interior component concentrates the plasma in a space between the electrodes;
• and
• the groove is arranged only in the vicinity of the inner periphery of the interior component.