Semiconductor substrate and method of manufacturing the same

A method of manufacturing a plurality of semiconductor substrates, each of which has a base substrate and a single crystal semiconductor layer disposed on the base substrate through an insulating layer, the method comprising:

• forming a protective layer on a surface of a single crystal semiconductor substrate material;
• forming a defective layer in the semiconductor substrate material through the protective layer covering the surface by ion implantation to define a single crystal thin film in a surface region of the semiconductor substrate material, the single crystal thin film to be the single crystal semiconductor layer of the semiconductor substrate;
• preparing the base substrate having the insulating layer thereon, the base substrate having a quality inferior to that of the semiconductor substrate material;
• bonding the base substrate to the single crystal thin film of the semiconductor substrate material with the insulating layer interposed therebetween;
• detaching the semiconductor substrate material from the base substrate at the defective layer so that the semiconductor substrate composed of the base substrate and the single crystal semiconductor layer disposed on the base substrate through the insulating layer is provided;
• and
• reusing the semiconductor substrate material for forming another semiconductor substrate,
• wherein the protective layer is removed before the base substrate is bonded to the semiconductor substrate material.

A method of manufacturing a plurality of semiconductor substrates, each of which has a base substrate and a single crystal semiconductor layer disposed on the base substrate through an insulating layer, the method comprising:

• forming a protective layer on a surface of a single crystal semiconductor substrate material;
• forming a defective layer in the semiconductor substrate material through the protective layer covering the surface by ion implantation to define a single crystal thin film in a surface region of the semiconductor substrate material, the single crystal thin film to be the single crystal semiconductor layer of the semiconductor substrate;
• preparing the base substrate having the insulating layer thereon, the base substrate having a quality inferior to that of the semiconductor substrate material;
• bonding the base substrate to the single crystal thin film of the semiconductor substrate material with the insulating layer interposed therebetween;
• detaching the semiconductor substrate material from the base substrate at the defective layer so that the semiconductor substrate composed of the base substrate and the single crystal semiconductor layer disposed on the base substrate through the insulating layer is provided;
• and
• reusing the semiconductor substrate material for forming another semiconductor substrate,
• wherein the protective layer is removed before the base substrate is bonded to the semiconductor substrate material
• further comprising steps of forming a trench in the semiconductor substrate material and filling the trench with a material before forming the defective layer, the trench having a depth deeper than that where the defective layer is to be formed.

A method of manufacturing a plurality of semiconductor substrates, each of which has a base substrate and a semiconductor layer disposed on the base substrate through an insulating layer, the method comprising:

• selecting a donor substrate, the donor substrate comprising a semiconductor material and having a front side and a back side;
• forming a protective layer on the front side and the back side of the donor substrate;
• forming a first ion-implanted layer in the donor substrate at a first depth by ion-implantation through the protective layer on the front side of the donor substrate, the first ion-implanted layer defining a first semiconductor layer between the front surface and the first ion-implanted layer;
• forming a second ion-implanted layer in the semiconductor substrate material at a second depth by ion-implantation performed through the protective layer on the back side of the donor substrate, the second ion-implanted layer defining a second semiconductor layer between the back side and the second ion-implanted layer;
• removing the protective layer from the front side and the back side of the donor substrate;
• bonding first and second base substrates to the first and second semiconductor layers of the semiconductor substrate material;
• and
• thermally treating the donor substrate to induce separation of the first and second semiconductor layers from a central portion of the donor substrate;
• and separating a first semiconductor substrate from the donor substrate, the first semiconductor substrate comprising the first base substrate and the first semiconductor layer, and separating a second semiconductor substrate from the donor substrate, the second semiconductor substrate comprising the second base substrate and the second semiconductor layer.

A method of manufacturing a semiconductor substrate composed of a base substrate and a semiconductor layer disposed on the base substrate in an insulated state from the base substrate, the method comprising:

• forming a contamination protective layer on a semiconductor substrate material;
• forming an ion-implanted layer in the semiconductor substrate material by implanting ions through the contamination protective layer;
• removing at least a part of the contamination protective layer from the semiconductor substrate material by etching to thereby expose an etched surface of the contamination protective layer;
• flattening the etched surface to expose a treatment surface of the contamination protective layer;
• directly bonding the semiconductor substrate material and the base substrate through the substrate material treatment surface;
• and
• detaching the semiconductor substrate material from the base substrate at the ion-implanted layer by a heat treatment.