Chemical feature doubling process

A method of decreasing the spacing between patterned resist features comprising:

• depositing a coating over the patterned resist features having a first spacing therebetween, the coating comprising at least a basic compound, a photoacid generator, a light absorbing dye, and a coating material, the patterned resist feature comprising a polymer having an acid labile pendent group;
• irradiating the coated patterned resist features, thereby forming a deprotected region in the inner portions of the patterned resist features;
• optionally heating the coated patterned resist features;
• and
• removing the coating and the deprotected region thereby providing patterned resist features having a second spacing therebetween, wherein the second spacing is smaller than the first spacing.

A method of making a sub-lithographic structure, comprising:

• patterning a chemically amplified resist so as to have lithographic structures;
• contacting coating with the patterned chemically amplified resist, the coating comprising an amine or a hydroxide compound, a photoacid generator, a light absorbing dye, and a coating material;
• irradiating the coated patterned chemically amplified resist with light having a wavelength of at least one of 365 nm, 248 nm, 193 nm, and 157 nm;
• removing the coating from the patterned chemically amplified resist;
• and
• contacting the patterned chemically amplified resist with an aqueous alkaline developer to provide the sub-lithographic structure.