US 6,493,227 B2Granted

Cooling apparatus for power semiconductors

AssigneeDanfoss Drives A/S

InventorsJesper Soebygaard Nielsen, Lars Kappel

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Abstract

A cooling apparatus for power semiconductors, which apparatus is essentially box-shaped, has two extruded cooling sections (14, 15) joined to each other. One of the cooling profiles (14) forms a first heat-conducting side wall (16), and the other cooling profile (15) forms a second heat-conducting side wall (17), opposite the first side wall (16), of the cooling apparatus (1). The side walls (16, 17) have cooling partitions (18, 19) formed on the inner sides of the latter, which cooling partitions bound cooling channels through which a cooling fluid can be conducted. Power semiconductors (4, 5) are to be attached to the outer sides of the side walls (16, 17) in a heat-conducting manner. In order to achieve the largest possible cooling surface of the cooling apparatus, the cooling partitions (18) formed on the first side wall (16) project between the cooling partitions (19) formed on the second side wall (17).

Claims8

Dependent claims

Cooling apparatus for power semiconductors, which apparatus is essentially box-shaped and displays two extruded cooling sections joined to each other, of which one cooling section forms a first heat-conducting side wall and the other cooling section forms a second heat-conducting side wall, opposite the first side wall, of the cooling apparatus;

in this, the side walls display cooling partitions formed on the inner sides of the latter, which cooling partitions bound cooling channels through which cooling fluid can be conducted;
the cooling partitions formed on the first side wall project between the cooling partitions formed on the second side wall;
the first side wall displays a smaller cross section than the second side wall;
and power semiconductors are to be attached to the outer side of the second side wall in a heat-conducting manner;
wherein power semiconductors with lower waste heat are to be attached to the outer side of the first side wall and power semiconductors with higher waste heat are to be attached to the outer side of the second side wall, and that the cross sections of all of the cooling partitions formed on the inner sides of the side walls increase from the first towards the second side walls.

2 more elements

Dependencies are inferred from the claim text.