Method for controlling dopant profiles and dopant activation by electron beam processing
AssigneeElectron Vision Corporation
InventorsMatthew F. Ross, Charles Hannes, William R. Livesay
Life of this patent
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Abstract
An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.
Claims23
A process for producing a microelectronic device which comprises introducing a dopant into a dielectric or semiconductor substrate;
- and then subjecting the substrate to sufficient electron beam irradiation to distribute and activate the dopant in the substrate, wherein the electron beam irradiation is conducted at an electron beam energy level ranging from about 0.5 to about 15 KeV and an electron beam current of from about 1 to about 150 mA.
A process fir producing a microelectronic device which comprises
- (a) introducing a dopant into a dielectric or semiconductor substrate by spin coating the substrate with a dopant containing composition;
- (b) drying the composition on the substrate;
- (c) subjecting the substrate to sufficient electron beam irradiation to distribute and activate the dopant in the substrate, wherein the electron beam irradiation is conducted at an electron beam energy level ranging from about 0.5 to about 15 KeV and an electron beam current of from about 1 to about 150 mA;
- and
- (d) removing, any excess dopant containing composition.
A process for producing a microelectronic device which comprises introducing a dopant into a dielectric or semiconductor substrate;
- subjecting the substrate to a thermal annealing treatment, and then subjecting the substrate to sufficient electron beam irradiation to distribute and activate the dopant in the substrate.
Dependencies are inferred from the claim text.