Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
AssigneeCanon Kabushiki Kaisha
InventorsNaoki Nishimura, Yoshinobu Sekiguchi, Tadahiko Hirai
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Abstract
The fabrication process of a conventional MRAM using a magnetoresistive effect element as a memory device is difficult, and the device structure makes it difficult to decrease the cell area and increase the degree of integration. It is an object of this invention to realize an MRAM which can achieve a high integration degree. A memory device is characterized by including a magnetoresistive element, a bit line formed above this magnetoresistive element, and a write line. The magnetoresistive element is formed immediately above the drain region of a field-effect transistor.
Claims21
A memory comprising:
- a magnetoresistive element on a substrate which has a structure in which first and second magnetic layers are stacked, and a nonmagnetic layer is sandwiched between said first and second magnetic layers;
- a write line which generates a magnetic field under an electric current and applies the magnetic field to the magnetoresistive element to change magnetization direction in said first or second magnetic layer;
- and
- a transistor which is electrically coupled to the magnetoresistive element and is a switching element to actuate the magnetoresistive element,
- wherein said magnetoresistive element is formed immediately above a drain region of said transistor.
Dependencies are inferred from the claim text.