Method of positive mobile iron contamination (PMIC) detection and apparatus of performing the same

Abstract

A positive mobile iron contamination (PMIC) detection apparatus disposed on a semiconductor substrate. An active region is defined on the semiconductor substrate using field oxide layers, and an MOS transistor is disposed in the active region. The positive mobile iron contamination (PMIC) detection apparatus comprises a heating device, a temperature-taking device, and a gate. The heating device is disposed on the surfaces of the field oxide layers so as to heat the semiconductor substrate. The temperature-taking device is disposed on the surface of the heating device so as to take the temperature of the semiconductor substrate and further to be the base for adjustment. The gate is disposed above the heating device, so as to receive a bias. The heating device can be a polysilicon layer; the temperature-taking device can be aluminum wire of the Kelvin structure; the externally connected current meter can measure charge pumping currents under various conditions, so as to calculate the quantity of positive mobile iron contamination.

Dependencies are inferred from the claim text.