Interconnection layer layout comprising cut-out conductive lines that ensure proper profile of overlying passivation layer
AssigneeSamsung Electronics Co., Ltd.
InventorsKweon-Jae Lee, Weon-Chul Hong
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Abstract
A layout structure of the interconnection layers of a semiconductor device includes a plurality of conducting lines extending adjacent one another, and at least one rectangular cut-out formed in a side of each of the conducting lines, wherein a width of gap between adjacent ones of the plurality of conducting lines is increased at each rectangular cut-out. The rectangular cut-out serves to increase the space between adjacent conducting lines so as to secure a proper gap there between upon deposition of a passivation layer.
Claims21
A layout structure of interconnection layers, comprising:
- a plurality of conducting lines extending adjacent one another in a semiconductor device;
- at least one rectangular cut-out formed in a side of each of said conducting lines, wherein the width of a gap between adjacent ones of said plurality of conducting lines is increased at each said rectangular cut-out;
- and
- an insulating layer covering said plurality of conducting lines, wherein each said rectangular cut-out is dimensioned to achieve a design gap between respective confronting flank portions of said insulating layer which cover adjacent ones of said plurality of conducting lines.
A layout structure of interconnection layers, comprising:
- a plurality of conducting lines extending adjacent one another in a semiconductor device, said plurality of conducting lines including a first region in which a spacing between adjacent conducting lines is narrow, and a second region in which a spacing between adjacent conducting lines is wider than in said first region;
- at least one rectangular cut-out formed in a side of each of said conducting lines, wherein the width of a gap between adjacent ones of said plurality of conducting lines is increased at each said rectangular cut-out;
- and
- an insulating layer covering said plurality of conducting lines, wherein each said rectangular cut-out is dimensioned to achieve a design gap between respective confronting flank portions of said insulating layer which cover adjacent ones of said plurality of conducting lines.
A semiconductor device comprising:
- a cell array region for containing a plurality of memory cells;
- a peripheral circuit region for containing circuits which drive said memory cells;
- a plurality of conducting lines extending adjacent one another in a given pattern in said cell array region and peripheral circuit region;
- a passivation layer formed over said conducting lines;
- and
- at least one rectangular cut-out formed in a side of each of said conducting lines, wherein a width of gap between adjacent ones of said plurality of conducting lines is increased at each said rectangular cut-out.
A semiconductor device comprising:
- an interconnection layer comprising a plurality of adjacent conducting lines extending parallel to one another, the conducting lines extending linearly in a first region of the interconnection layer, and the conducting lines forming a turn in a second region of the interconnection layer contiguous to said first region, wherein the spacing between adjacent ones of said conducting lines is smaller in said first region than in said second region, and wherein said adjacent ones of said conducting lines have confronting sides in which a cut-out is defined in said first region at a location adjacent said second region, the width of a gap between said adjacent ones of the conducting lines in said first region being increased by said cut-out;
- and
- an insulating layer disposed over said conducting lines, said insulating layer having confronting flank portions that are spaced entirely from one another in a region thereof that overlies said location in which the cut-outs exist in said conducting lines, a gap open to the top of said insulating layer existing between the confronting flank portions of said insulating layer over the transition between said first and second regions of said conducting lines.
Dependencies are inferred from the claim text.