Integration of anodized metal capacitors and high temperature deposition capacitors
AssigneeIntarsia Corporation
InventorsTeruo Sasagawa, Brian W. Arbuckle
Life of this patent
Estimating the term…
Abstract
An integrated passive component device in which an anodized metal capacitor and a HTD capacitor are fabricated with a protective conductive metal layer disposed between the dielectric layer of the anodized metal capacitor and the dielectric layer of the HTD capacitor. The protective conductive metal layer helps to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the dielectric layer of the anodized metal capacitor. The anodized metal capacitor and the high temperature deposition capacitor are fabricated on the same substrate using only one masking operation.
Claims44
An integrated device comprising:
- a first capacitor of a first type;
- a second capacitor of a second type;
- and
- a protective conductive metal layer disposed between a dielectric layer of the first capacitor and a dielectric layer of the second capacitor, the protective conductive metal layer helping to prevent process chemicals and conditions used to fabricate the dielectric layer of the second capacitor from adversely affecting the dielectric layer of the first capacitor.
A multi-layered structure for an integrated device comprising:
- an anodized metal layer;
- a dielectric film layer;
- and
- a protective conductive metal layer disposed between the anodized metal layer and the dielectric film layer, the protective conductive metal layer helping to protect the anodized metal layer from process chemicals and conditions used to fabricate the dielectric film layer.
An integrated device comprising:
- a substrate;
- a conductive metal layer deposited upon the substrate;
- an anodized metal layer formed upon the conductive metal layer;
- a protective conductive metal layer deposited upon the anodized metal layer;
- and
- a dielectric film layer deposited upon the protective conductive metal layer, the protective conductive metal layer helping to protect the anodized metal layer from process chemicals and conditions associated with the deposition of the dielectric film layer.
An integrated component device comprising:
- a substrate;
- a first conductive metal layer deposited upon the substrate;
- a dielectric film layer deposited upon the first conductive metal layer;
- and
- an anodized metal layer formed upon a second conductive metal layer, the second conductive metal layer disposed between the dielectric film layer and the anodized metal layer, the second conductive layer helping to prevent hillocking or contamination of the first conductive metal layer from adversely affecting the formation of the anodized layer upon the second conductive layer.
Dependencies are inferred from the claim text.