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US 6,486,523 B2Granted
Power semiconductor device with temperature detector
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoshifumi Tomomatsu
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Abstract
A power semiconductor device includes a power semiconductor element formed on a substrate and a temperature detector including a temperature detecting diode element having at least one diode for detecting temperature formed on the substrate. Additionally, the temperature detecting diode includes two regions having different conductive type each other. The capacitance between one region and base region of the semiconductor element is as large as capacitance between another region and the base region.
Claims7
A power semiconductor device comprising:
- a power semiconductor element formed on a substrate;
- and
- a temperature detector including a temperature detecting diode element having at least one diode for detecting a temperature formed on the substrate;
- wherein the diode includes two regions each having a different conductive type, and a capacitance formed between one region and a base region of the semiconductor element is as much as a capacitance formed between the other region and the base region.
1 more element
Dependencies are inferred from the claim text.