Power semiconductor device having high breakdown voltage and method for fabricating the same

A power semiconductor device comprising:

• a source structure having a projected portion with a tip-shaped end portion on its center, formed so as to surround a predetermined region of right and left and upper portions of the projected portion, and containing a source electrode formed so as to contact extended regions of first and second conductivity types with high concentration in a well region of a first conductivity type;
• drain structures formed so that two drain structures are separated each other in a predetermined region surrounded by the source structure and each of the two drain structures is spaced-apart from the side of the projected portion of the source structure and does not exist on the end portion of the projected portion, and containing a drain electrode formed so as to contact an extended region of a second conductivity type with high concentration in a well region of a second conductivity type;
• extended drain structures formed so as to be connected to the well region of a second conductivity type and extend from the drain structures to a predetermined distance, and forming a channel with a field effect channel between sides of the projected portion of the source structure and the extended drain structures, and not forming a channel in an upper portion of the projected portion of the source structure;
• and
• a gate structure arranged on the field effect channel between the source structure and the extended drain structures.