Semiconductor contact and method of forming the same

A dynamic random access memory device including a transistor device, the memory device comprising:

• a first source/drain region disposed in a semiconductor body;
• a second source/drain region disposed in the semiconductor body, the second source/drain region being spaced from the first source/drain region by a channel region;
• a plug contact extending out from the first source/drain region;
• a dielectric layer overlying the channel region;
• a gate electrode overlying the dielectric layer, the gate electrode including:
• a polysilicon layer spaced a first distance from the plug contact;
• and
• a conductive layer disposed over the polysilicon layer and spaced a second distance from the plug contact, the second distance being greater than the first distance, the conductive layer having a lower resistivity than the polysilicon layer;
• an insulating region disposed between the gate electrode and the plug contact;
• and
• a capacitor with a first plate coupled to the second source drain region.