Method for stabilizing low dielectric constant materials
AssigneeUnited Microelectronics Corp.
InventorsCheng-Yuan Tsai, Yung-Tsung Wei, Teng-Chun Tsai, Ming-Sheng Yang
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Abstract
The present invention provides a method for stabilizing low dielectric constant materials in a semiconductor structure. The method comprises providing the semiconductor structure and thereon spinning-on a dielectric layer. After a curing step, the dielectric layer is treated with an aqueous solution containing, for example, ammonium hydroxide. With the aqueous solution, a passivated film formed on the surface of the dielectric layer, such as a polymer layer, can protect the dielectric layer from adsorption of moisture or solvents.
Claims12
A method for stabilizing low dielectric constant materials in a semiconductor structure, said method comprising:
- providing said semiconductor structure;
- spinning-on a dielectric layer on said semiconductor structure;
- and
- treating said dielectric layer with an aqueous solution to form a passivated film over said dielectric layer, said aqueous solution comprising an amine compound.
A method for forming a passivated film from a polymer layer with a low dielectric constant in a semiconductor structure, said method comprising;
- providing said semiconductor structure;
- spinning-on said polymer layer on said semiconductor structure;
- curing said polymer layer;
- and
- forming said passivated film from said cured polymer layer, said forming step accomplished by treating a surface of said polymer layer with an alkaline solution contained a compound of amine therein.
A method for forming a passivated film from a polymer layer with a low dielectric constant in a semiconductor structure, said method comprising:
- providing said semiconductor structure;
- spinning-on said polymer layer on said semiconductor structure;
- curing said polymer layer;
- and forming said passivated film from said cured polymer layer, said forming step accomplished by treating a surface of said polymer layer with an alkaline solution contained a compound of ammonium hydroxide.
Dependencies are inferred from the claim text.