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US 6,486,057 B1Granted
Process for preparing Cu damascene interconnection
AssigneeNational Science Council
InventorsChing-Fa Yeh, Yueh-Chuan Lee, Chien-Hsing Lin
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Abstract
The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.
Claims7
A process for preparing a Cu damascene interconnection comprising the following steps:
- forming a low-K dielectric layer on a substrate;
- forming a passivation layer on said low-K dielectric layer;
- subjecting said passivation layer/low-K dielectric layer to a N2O plasma annealing treatment;
- forming a plurality of trenches on said low-K dielectric layer/passivation layer;
- forming a pad oxidation layer on side walls of each of said plurality of trenches;
- forming a barrier metal layer on said pad oxidation layer;
- depositing copper on the resulting structure;
- and
- chemical mechanical polishing said copper until said passivation layer is exposed, thereby forming a Cu damascene interconnection on said low-K dielectric layer.
6 more elements
Dependencies are inferred from the claim text.