Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon;
• depositing a second layer of dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a third layer of dielectric over the surface of said second layer of dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon;
• depositing a layer of Intra Level Dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a third layer of dielectric over the surface of said second layer of dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon;
• depositing a layer of Intra Level Dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a layer of Inter Metal Dielectric over the surface of said layer of Intra Level Dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate, said layer of silicon dioxide being deposited to a thickness between about 3 and 4 μm;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon;
• depositing a layer of Intra Level Dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a layer of Inter Metal Dielectric over the surface of said layer of Intra Level Dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate, said layer of silicon dioxide being deposited to a thickness between about 3 and 4 μm;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon, said epitaxial silicon being deposited to a thickness of about 3 μm;
• depositing a layer of Intra Level Dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a layer of Inter Metal Dielectric over the surface of said layer of Intra Level Dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a layer of silicon dioxide over the surface of said substrate, said layer of silicon dioxide being deposited to a thickness between about 3 and 4 μm;
• patterning and etching said layer of silicon dioxide, creating openings through said layer of silicon dioxide, further creating a pattern of silicon dioxide overlying said substrate and being aligned with coils of a thereover to be created inductor, said pattern of silicon dioxide overlying said substrate being in alignment with coils of said inductor created in a Cartesian X-direction, said pattern of silicon dioxide in addition being in alignment with coils of said inductor created in a Cartesian Y-direction, said Cartesian X-direction intersecting said Cartesian Y-direction under an angle of about 90 degrees;
• filling said openings created through said layer of silicon dioxide with epitaxial silicon, said epitaxial silicon being deposited to a thickness of about 3 μm;
• depositing a layer of Intra Level Dielectric over the surface of said pattern of silicon dioxide, thereby including the surface of said filling of epitaxial silicon;
• depositing a layer of Inter Metal Dielectric over the surface of said layer of Intra Level Dielectric;
• and
• creating a horizontal spiral inductor over the surface of said third layer of dielectric.

A method of reducing substrate coupling for an inductor created over the surface of a substrate, comprising the steps of:

• providing a substrate;
• depositing a first layer of dielectric over the surface of said substrate;
• patterning and etching said first layer of dielectric, creating at least one opening through said first layer of dielectric, further creating a pattern of said first layer of dielectric overlying said substrate and being aligned with and underlying coils of a thereover to be created inductor;
• filling said at least one opening created through said first layer of dielectric with epitaxial silicon;
• depositing at least one second layer of dielectric over the surface of said pattern of said first layer of dielectric, thereby including the surface of said filling of epitaxial silicon;
• and
• creating an inductor over the surface of said at least one second layer of dielectric.