Method for forming self aligned contacts

Abstract

A method for forming a self aligned contact of a semiconductor device, comprises the steps of: forming a conductive line and a hard mask on a structure of a semiconductor substrate; forming spacers constructed by an insulation material on the sidewalls of the conductive line and the hard mask; forming an interlayer insulating layer on the resultant material and then etching the interlayer insulating layer at the contact part; forming an etching barrier layer on the surface of the substrate between the spacers; forming an uneven buffer layer on the resultant material, the uneven buffer deposited on the hard mask thickly and on the etching barrier layer thinly by using a material having a bad step coverage; and forming a self aligned contact by sequentially etching the uneven buffer layer and the etching barrier layer and then opening the surface of the substrate between the spacers. Since the hard mask of the line part is protected by the uneven buffer layer deposited thickly, the insulating characteristic between the line and the contact is enhanced.

Dependencies are inferred from the claim text.