Process for making wafers for ion implantation monitoring
AssigneeMEMC Electronic Materials, Inc.
InventorLarry W. Shive
Life of this patent
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Abstract
A process is disclosed for making a silicon wafer with low and uniform surface stress by growing at least approximately 8 angstroms of silicon oxide thereon to produce a wafer for use as a control wafer in ion implantation. The process involves the steps of (a) subjecting a feed wafer substantially free of oxide or having less than approximately 4 angstroms of silicon oxide thereon to hydrogen termination of the silicon surface; or (b) subjecting such a feed wafer to said hydrogen termination followed by subjecting the resulting wafer to treatment with an oxidant having a standard reduction potential less than approximately 1.77 volts; the wafer resulting from either step (a) or (b) having a TWO reading less than approximately 30 across the entire wafer.
Claims33
A process for making a silicon wafer with low and uniform surface stress by growing at least approximately 8 angstroms of silicon oxide thereon to produce a wafer for use as a control wafer in ion implantation, which method comprises the steps of:
- (a) subjecting a feed wafer substantially free of oxide or having less than approximately 4 angstroms of silicon oxide thereon to hydrogen termination of the silicon surface;
- or
- (b) subjecting such a feed wafer to said hydrogen termination followed by subjecting the resulting wafer to treatment with an oxidant having a standard reduction potential less than approximately 1.77 volts;
- the wafer resulting from either step (a) or (b) having a TW0 reading less than approximately 30 across the entire wafer.
A process for making a silicon wafer with low and uniform surface stress by growing at least approximately 8 angstroms of silicon oxide thereon to produce a wafer for use as a control wafer in ion implantation, said method comprising subjecting a feed wafer substantially free of oxide or having less than approximately 4 angstroms of silicon oxide thereon to hydrogen termination of the silicon surface to produce a wafer having a TW0 reading less than approximately 30 across the entire wafer.
A process for making a silicon wafer with low and uniform surface stress by growing at least approximately 8 angstroms of silicon oxide thereon to produce a wafer for use as a control wafer in ion implantation, said method comprising subjecting a feed wafer substantially free of oxide or having less than approximately 4 angstroms of silicon oxide thereon to hydrogen termination of the silicon surface followed by subjecting the resulting wafer to treatment with an oxidant having a standard reduction potential less than approximately 1.77 volts to produce a wafer having a TW0 reading less than approximately 30 across the entire wafer.
Dependencies are inferred from the claim text.