Method to self-align a lithographic pattern to a workpiece
AssigneeInternational Business Machines Corporation
InventorsHiroyuki Akatsu, Franz X. Zach
Life of this patent
Estimating the term…
Abstract
A method to self-align a lithographic pattern to a workpiece, the method including the steps of obtaining a workpiece having a predetermined pattern of features; modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified; applying a photoresist material; masklessly exposing the photoresist material; developing the photoresist material, the substantial difference in reflectivity of the two adjacent features causing the developed photoresist material to reveal one adjacent feature but not the other.
Claims21
A method to self-align a lithographic pattern to a workpiece, the method comprising
- obtaining a workpiece having a predetermined pattern of features;
- modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified;
- applying a photoresist material to the pattern in a predetermined thickness according to at least the refractive index of the photoresist and a wavelength of an incident beam that exposes the photoresist material;
- masklessly exposing the photoresist material with an incident beam of light;
- developing said photoresist material, said substantial difference in reflectivity of said two adjacent features causing said developed photoresist material to reveal one adjacent feature but not the other.
A method to self-align a lithographic pattern to a workpiece, the method comprising the steps of:
- obtaining a workpiece having a predetermined pattern of features;
- modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified;
- applying a photoresist material to the pattern in a predetermined thickness according to at least the refractive index of the photoresist and a wavelength of an incident beam that exposes the photoresist material;
- flood exposing the photoresist material with an incident beam of light such that an area flood exposed corresponds to at least the two adjacent features in the predetermined pattern of features;
- developing said photoresist material, said substantial difference in reflectivity of said two adjacent features causing said developed photoresist material to reveal one adjacent feature but not the other.
A method to self-align a lithographic pattern to a workpiece, the method comprising the steps of:
- obtaining a workpiece having a predetermined pattern of features;
- modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified;
- applying a transparent material to the pattern of features;
- applying a photoresist material to the transparent material in a predetermined thickness according to at least the refractive index of the photoresist and the retractive index of the transparent material and
- a wavelength of an incident beam that exposes the photoresist material;
- masklessly exposing the photoresist material with an incident beam of light;
- developing said photoresist material, said substantial difference in reflectivity of said two adjacent features causing said developed photoresist material to reveal one adjacent feature but not the other.
A method to self-align a lithographic pattern to a workpiece, the method comprising the steps of:
- obtaining a workpiece having a predetermined pattern of features;
- modifying at least some of the features so that when a photoresist material is applied to the pattern, there is a substantial difference in reflectivity between two adjacent features, at least one of which has been modified;
- applying a transparent material to the pattern of features;
- applying a photoresist material to the transparent material in a predetermined thickness according to at least the refractive index of the photoresist and the retractive index of the transparent material and a wavelength of an incident beam that exposes the photoresist material;
- flood exposing the photoresist Material with an incident beam of light such that an area flood exposed corresponds to at least the two adjacent features in the predetermined pattern of features;
- developing said photoresist material, said substantial difference in reflectivity of said two adjacent features causing said developed photoresist material to reveal one adjacent feature but not the other.
Dependencies are inferred from the claim text.