High temperature process chamber having improved heat endurance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Liang Tseng, Hsyun-Ying Chan, Ping-Jen Cheng
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Liang Tseng, Hsyun-Ying Chan, Ping-Jen Cheng
Estimating the term…
A high temperature process chamber that has improved heat endurance and a method for improving heat endurance of a process chamber are described. In the high temperature process chamber, a heat insulating adapter is connected in-between a lift cylinder and a chamber body in which a plasma ashing process is conducted at 250° C. The heat insulating adapter prevents substantially heat conduction from the chamber body to the lift cylinder such that the cylinder can be safely operated at a temperature lower than 40° C. The present invention method for improving heat endurance of a process chamber can be carried out by connecting a heat insulating adapter between a wafer pedestal and a lift cylinder, conducting a process at a temperature of at least 200° C., and preferably at least 250° C. in the process chamber while maintaining a temperature of the lift cylinder at below 40° C.
A high temperature process chamber having improved heat endurance comprising:
A reactive ion etching (RIE) chamber equipped with a wafer pedestal comprising:
Dependencies are inferred from the claim text.