Semiconductor device having protective layer
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMitsuru Tanabe
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Abstract
An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.
Claims6
A semiconductor device comprising:
- a substrate;
- a cap layer formed over the substrate and containing In;
- a protective layer formed on the cap layer and consisting of GaAs;
- and
- an ohmic electrode formed on the protective layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm, and the protective layer comprises an n-type delta doped layer.
A semiconductor device comprising:
- a substrate made of InP;
- a cap layer formed over the substrate and consisting of InGaAs;
- a protective layer formed directly on the cap layer and consisting of GaAs;
- and
- an ohmic electrode formed on the protective layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm.
A semiconductor device comprising:
- a substrate;
- a cap layer formed on the substrate and consisting of InGaAs;
- a protective layer formed directly on the cap layer and consisting of GaAs;
- and
- an ohmic electrode formed on the protective layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm.
A semiconductor device comprising:
- a substrate;
- a cap layer formed on the substrate and containing InGaAs;
- a protective layer formed on the cap layer and consisting of GaAs;
- and
- an ohmic electrode formed on the protective layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm, wherein the protective layer comprises a n-type delta doped layer.
A semiconductor device comprising:
- a substrate;
- a cap layer formed on the substrate and containing InGaAs;
- a protective layer formed on the cap layer and consisting of GaAs;
- and
- an ohmic electrode formed on the protective layer,
- wherein the thickness of the protective layer is between 5 nm and 15 nm, wherein the protective layer comprises a n-type delta doped layer, and wherein the delta doped layer is made of Si.
Dependencies are inferred from the claim text.