Enhanced probe for gathering data from semiconductor devices
AssigneeMotorola, Inc.
InventorsTheresa J. Hopson, Kumar Shiralalgi, Ronald N. Legge
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Abstract
An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
Claims8
An enhanced probe comprising an amplifier for the receipt and amplification of a produced electrical signal representing information gathered from a semiconductor device, the amplifier formed within an interior aspect of a probe tip and thereby characterized as defining the probe tip.
An enhanced probe comprising at least one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), for the receipt and amplification of a produced electrical signal representing information gathered from a semiconductor device, the at least one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET) formed to define the enhanced probe tip.
Dependencies are inferred from the claim text.