ESD device with salicide layer isolated by shallow trench isolation for saving one salicide block photomask
AssigneeUnited Microelectronics Corp.
InventorsShiao-Shien Chen, Tien-Hao Tang, Shiang Huang-Lu
Life of this patent
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Abstract
A electrostatic discharge (ESD) device with salicide layers isolated by a shallow trench isolation in order to save one salicide block photomask. A shallow trench isolation is formed in drain region to isolate a portion of the drain region, so that the drain region is partitioned into two parts. A salicide layer is formed on the drain region. Since the salicide layer is not formed on the shallow trench isolation, without using an additional photomask, the salicide layer on the drain region is partitioned into two parts. The effect of the local thermal energy occurring to drain junction upon the contact metal of the drain region is eliminated.
Claims5
A electrostatic discharge (ESD) device with a salicide layer isolated by a shallow trench isolation, comprising:
- a P type substrate;
- an N well, formed in the P type substrate;
- a shallow trench isolation, formed in the N well;
- a gate structure, on the P type substrate other than the N well, wherein the gate structure has a first side and a second side, and the first side is near to N well;
- a source region, formed in the P type substrate at the second side of the gate structure;
- a first drain region at the first side of the gate structure, formed in the P type substrate and crossing an edge of the N well;
- a second drain region, formed in the N well, wherein the second drain region is isolated from the first drain region by the shallow trench isolation;
- and
- a salicide layer, formed on the gate, the source region, the first and the second drain regions.
An electrostatic discharge (ESD) device with a salicide layer isolated by a shallow trench isolation, comprising:
- a P type substrate;
- an N well, formed in the substrate;
- a P well, formed in the N well;
- a shallow trench isolation, formed in the P well;
- a gate structure, formed on the N well other than the P well, wherein the gate structure has a first side and a second side, and the first side is near to P well;
- a source region, formed in the N well at the second side of the gate structure;
- a first drain region, at the first side of the gate structure, formed in the N well and crossing an edge of the P well;
- a second drain region, formed in the P well, wherein the second drain region is isolated from the first drain region by the shallow trench isolation;
- and
- a salicide layer, formed on the source region, the first and second drain region, and gate.
A salicide layer isolated by a shallow trench isolation, comprising:
- a drain region, disposed in a N-well region;
- a shallow trench isolation, partitioning the drain region into two parts, wherein the part of the drain region at a first side of a gate structure, crosses an edge of the N well region;
- and
- a salicide layer, formed on the two parts of the drain region.
Dependencies are inferred from the claim text.