Dielectric capacitor and memory and method of manufacturing the same

Abstract

A bottom electrode, a dielectric film and a top electrode are sequentially provided on a substrate portion. The bottom electrode comprises an adhesive layer including IrHf, a precious metal layer including Ir, an oxygen inclusion layer including IrHfO, and a precious metal layer including Ir in sequence on the substrate portion. At the time of forming dielectric film, RTA (Rapid thermal annealing) is performed and thereafter inert gas thermal annealing is performed at a temperature equal to or higher than that in RTA, or reduction thermal annealing, thereby preventing deterioration of characteristics which occurs through hydrogen annealing. Moreover, the precious metal layer is provided between the adhesive layer and the oxygen inclusion layer. Therefore, adhesion of the bottom electrode is secured even though inert gas thermal annealing or reduction thermal annealing is performed in order to prevent deterioration of characteristics.

Dependencies are inferred from the claim text.