Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity

An amplifier, comprising:

• a field effect transistor having a current conduction channel including a first doped region located centrally within and proximate an upper region of said channel, a second doped region situated between said first doped region and said drain region, and a third doped region located between said first doped region and said source region, and wherein a first doping concentration of said first doped region is substantially greater than a second and third doping concentrations respectively of said second and third doped regions, wherein said first, second and third doped regions are doped with the same polarity dopants, and further wherein the doping concentration within said first doped region increases towards a source region of said transistor;
• an input impedance matching circuit coupled to a gate terminal of said field effect transistor;
• and
• an output impedance matching circuit coupled to a drain terminal of said field effect transistor.

A field effect transistor, comprising:

• a drain region;
• a source region;
• a channel formed between said drain and source regions, wherein said channel comprises a first doped region located centrally within and proximate an upper region of said channel, a second doped region situated between said first doped region and said drain region, and a third doped region located between said first doped region and said source region, and wherein a first doping concentration of said first doped region is substantially greater than a second and third doping concentrations respectively of said second and third doped regions, wherein said first, second and third doped regions are doped with the same polarity dopants, and further wherein the dopant concentration within said first doped region increases toward said source region;
• a dielectric formed over said channel;
• and
• a gate electrode formed over dielectric.