X-ray mask and method for providing same
AssigneeSandia National Laboratories
InventorsAlfredo M. Morales, Dawn M. Skala
Life of this patent
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Abstract
The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.
Claims12
An x-ray mask tool, comprising:
- a silicon substrate having a thickness, a top surface, and a bottom surfaces substantially parallel to said top surface, said silicon substrate having at least one pattern etched into said top surface, said at least one pattern extending to a depth of at least 10 microns into said thickness and comprising a plurality of etched channels having substantially parallel sides, said etched channels filled with a metal deposit to provide a plurality of metal structures embedded into said silicon substrate extending to said depth and flush with said top surface, said metal structures comprising features having lateral dimensions of less than 1 micron.
Dependencies are inferred from the claim text.