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US 6,477,065 B2Granted
Resonant gate driver
AssigneeTexas Instruments Incorporated
InventorDavid B. Parks
Life of this patent
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Abstract
A power supply (500) with vertical field effect transistor synchronous rectifiers (VFET1 and VFET2) having drivers (VFET Driver1 and VFET Driver2) which provide bipolar mode of operation by diode clamping an inductor overshoot which forwards biases the gate-source junction. The rectifiers have low on resistance useful in low output voltage power supplies.
Claims5
A dc power supply, comprising:
- (a) a transformer with a primary winding and a secondary winding;
- (b) a switched dc circuit connected to said primary winding;
- (c) a dc output coupled to said secondary winding;
- (d) a field effect transistor coupled between said secondary winding and ground;
- and
- (e) a gate driver with an output connected to the gate of said field effect transistor, said gate driver including:
- (i) first and second power supply inputs;
- (ii) a first switch coupled between said first power supply input and said output;
- (iii) a second switch coupled between said second power supply input and a passive overshoot circuit, said overshoot circuit coupled to said output;
- and
- (iv) a switch input coupled to said first and second switches and synchronized with said switched dc circuit.
8 more elements
Dependencies are inferred from the claim text.