Temperature control structure for integrated circuit

A temperature control structure for an integrated circuit, the structure comprising:

• a doped region of a first conductive type formed within a semiconductor material, the doped region having a first end and a second end;
• a first trench formed in the semiconductor material proximate the first end of the doped region and a second trench formed in the semiconductor material, spaced apart from the first trench, proximate the second end of the doped region;
• conductive material formed in the first and second trenches to provide a first conductive region in the semiconductor material proximate the first end of the doped region and second conductive region in the semiconductor material proximate the second end of the doped region;
• and
• a layer of conductive interconnect material that is spaced-apart from the doped region by a layer of dielectric material, the layer of conductive interconnect material being electrically connected to the first conductive region by a first conductive via that extends through the layer of dielectric material and to the second conductive region by a second conductive via, spaced-apart from the first conductive via, that extends through the layer of dielectric material, and the layer of conductive interconnect material being connected to a voltage source.