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US 6,476,496 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorJunko Izumitani
Life of this patent
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Abstract
An interconnection forming step provides an interconnection with an improved yield, a low cost and a high reliability. A semiconductor device includes an insulating layer formed on a silicon substrate and having a groove extending in a predetermined direction. A distance between side walls defining insulating layer increases as a position moves away from silicon substrate. The semiconductor device includes a conductive layer filling groove.
Claims7
A semiconductor device comprising:
- an insulating layer formed on a semiconductor substrate, and having a concavity extending in a predetermined direction,
- a distance between side walls defining said concavity increasing as a postion moves away from said semiconductor substrate;
- and
- a conductor layer made of a single conductive material filling said concavity.
1 more element
Dependencies are inferred from the claim text.