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US 6,476,449 B1Granted
Silicide block for ESD protection devices
AssigneeWinbond Electronics Corp.
InventorShi-Tron Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a first diffusion region having a silicided portion and a non-silicided portion. The device also has a second diffusion region, and a channel region between the first and second diffusion regions. The non-silicided portion of the first diffusion region has a plurality of non-silicided regions.
Claims22
A semiconductor device, comprising:
- a first diffusion region having a silicided portion and a non-silicided portion;
- a second diffusion region;
- a channel region between the first and second diffusion regions;
- and
- wherein the non-silicided portion has a plurality of separate non-silicided regions.
2 more elements
Dependencies are inferred from the claim text.