Semiconductor device and method for manufacturing the same
AssigneeSeiko Epson Corporation
InventorKazunobu Kuwazawa
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Abstract
A semiconductor device has a first capacitor component and a second capacitor component on a silicon substrate. In the semiconductor device, the first capacitor component has a first lower electrode composed of an impurity-doped polycrystal silicon film, a first insulation film formed on the first lower electrode, and a first upper electrode formed on the first insulation film. The second capacitor component has a second lower electrode formed from an impurity-doped polycrystal silicon film having an impurity concentration different from an impurity concentration of the polycrystal silicon film of the first lower electrode, a second insulation film formed on the second lower electrode and a second upper electrode formed on a second insulation film.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a first capacitor component and a second capacitor component on the semiconductor substrate,
- the first capacitor component including a first lower electrode formed from an impurity-doped polycrystal silicon film, a first insulation film formed on the first lower electrode and a first upper electrode formed on the first insulation film, and
- the second capacitor component including a second lower electrode formed from an impurity-doped polycrystal silicon film with an impurity concentration different from an impurity concentration of the impurity in the polycrystal silicon film of the first lower electrode, a second insulation film formed on the second lower electrode and a second upper electrode formed on the second insulation film.
A semiconductor device comprising:
- a semiconductor substrate;
- a first LOCOS oxide film and a second LOCOS oxide film formed on the semiconductor substrate;
- and
- a first capacitor component formed on the first LOCOS oxide film and a second capacitor component formed on the second LOCOS oxide film,
- the first capacitor component including a first lower electrode formed from an impurity-doped polycrystal silicon film, a first insulation film formed on the first lower electrode and a first upper electrode formed on the first insulation film, and
- the second capacitor component including a second lower electrode formed from an impurity-doped polycrystal silicon film with an impurity concentration different from an impurity concentration of the impurity in the polycrystal silicon film of the first lower electrode, a second insulation film formed on the second lower electrode and a second upper electrode formed on the second insulation film.
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a first capacitor component and a second capacitor component on the semiconductor substrate,
- the first capacitor component including a first lower electrode formed from an impurity-doped polycrystal silicon film, a first insulation film formed on the first lower electrode and a first upper electrode formed on the first insulation film, and
- the second capacitor component including a second lower electrode formed from an impurity-doped polycrystal silicon film with an impurity concentration different from an impurity concentration of the impurity in the polycrystal silicon film of the first lower electrode, a second insulation film formed on the second lower electrode and a second upper electrode formed on the second insulation film, wherein an impurity is introduced into the first lower electrode by thermal diffusion and an impurity is introduced into the second lower electrode by thermal diffusion.
Dependencies are inferred from the claim text.