Optimization of organic bottom anti-reflective coating (BARC) thickness for dual damascene process

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a second barrier layer over a first level;
• forming a first dielectric layer over the second barrier layer;
• forming a first barrier layer over the first dielectric layer
• forming a second dielectric layer over the first barrier layer;
• forming a first resist over the second dielectric layer;
• etching the first and second dielectric layers and the first barrier layer to form an opening through the first and dielectric layers and the first barrier layer, the opening including a via in the first dielectric layer;
• removing the first resist;
• depositing an anti-reflective material in the opening in a spin coater at about 2000 rpm to about 4000 rpm;
• depositing a second resist over the second dielectric layer;
• etching the second dielectric layer to form a trench after the portion of the anti-reflective material is removed;
• removing the second resist;
• completely removing the anti-reflective material after the trench is formed;
• etching the second barrier layer to expose the first level;
• and
• filling the trench and via with conductive material to form a feature;
• and
• planarizing a top surface of the second dielectric layer.