Semiconductor device having a passivation layer and method for its fabrication

A process for fabricating a semiconductor device comprising the steps of:

• providing a semiconductor substrate;
• forming a plurality of metal structures overlying the substrate, the metal structures characterized by a thickness, adjacent ones of the plurality of metal structures being separated by a gap;
• depositing a first HDP layer of sufficient thickness to substantially fill the gap, the first HDP layer overlying and covering the plurality of metal structures;
• and
• depositing a second hard, UV transparent layer overlying the first HDP layer.

A method for fabricating a semiconductor device comprising:

• forming a semiconductor substrate with a plurality of devices in the substrate;
• depositing a first metal layer having a thickness over the substrate;
• etching the first metal layer such that a plurality of metal lines are formed having a width and having a plurality of gaps between the metal lines;
• performing an HDP process to deposit an HDP oxide layer over the metal lines and the substrate, the HDP oxide substantially filling the plurality of gaps;
• and
• forming a hard protective layer over the HDP oxide layer using a PECVD process.

A method for fabricating a semiconductor device comprising the steps of:

• providing a substrate;
• forming a metal layer over the substrate;
• etching the metal layer to produce a plurality of metal lines on the substrate, leaving a plurality of metal layer gaps between the metal lines;
• filling said plurality of metal layer gaps using a high density plasma oxide process, leaving a plurality of high density plasma oxide layer gaps;
• and
• filling said plurality of high density plasma oxide layer gaps using a plasma enhanced chemical vapor deposition process, leaving a substantially planar surface.