Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology

An integrated circuit, comprising:

• a semiconductor substrate;
• a pair of spaced-apart polysilicon islands over said semiconductor substrate;
• a first dielectric layer disposed over at least a portion of each of said polysilicon islands, and over said semiconductor substrate between said pair of polysilicon islands;
• a thin film resistive layer disposed over said first dielectric layer between said pair of polysilicon islands, wherein said thin film resistive layer is electrically coupled to said polysilicon islands by way of respective contact holes through said first dielectric layer situated over respective first regions of said polysilicon islands;
• and
• a second dielectric layer disposed over at least a portion of said polysilicon islands;
• and
• metal contacts to respective polysilicon islands situated over respective second regions of said polysilicon islands, wherein said second regions are different than respective first regions of said polysilicon islands.

A method of forming an integrated circuit, comprising:

• forming a pair of spaced-apart polysilicon islands over a semiconductor substrate;
• forming a first dielectric layer over said pair of polysilicon islands and over said semiconductor substrate including between said pair of polysilicon islands;
• forming first contact holes through said first dielectric layer to expose respective first regions of said polysilicon islands;
• forming a second contact hole through said first dielectric layer to expose said semiconductor substrate;
• forming first silicide layers within said first contact holes over said respective polysilicon islands;
• forming a second silicide layer within said second contact hole over said semiconductor substrate to form a Schottky diode;
• forming a layer of thin film resistive material over respective first regions of said polysilicon islands and over said first dielectric layer between said pair of polysilicon islands;
• forming a second dielectric layer over said polysilicon islands, said thin film resistive material layer, and said second silicide layer;
• forming third contact holes through said first and second dielectric layers to expose respective second regions of said polysilicon islands, wherein said first regions are different than said second regions of said polysilicon islands;
• forming a fourth contact hole through said second dielectric layer to expose said second silicide layer;
• and
• forming metal contacts within said third and fourth contact holes.

A method of forming a thin film resistor, comprising:

• forming a pair of spaced-apart electrically conductive islands over a substrate;
• forming a first dielectric layer over said pair of polysilicon islands and over said substrate between said electrically conductive islands;
• forming first contact holes through said first dielectric layer to expose respective first regions of said electrically conductive islands;
• forming a layer of thin film resistive material over respective first regions of said electrically conductive islands and over said first dielectric layer between said pair of polysilicon islands;
• forming a second dielectric layer over said electrically conductive islands and over said thin film resistive material layer;
• forming second contact holes through said first and second dielectric layers to expose respective second regions of said electrically-conductive islands, wherein said first regions are different than said second regions of said polysilicon islands;
• and
• forming electrically-conductive contacts within said second contact holes.