Pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Kishimura, Akiko Katsuyama, Masaru Sasago
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Abstract
A resist film is formed by applying, on a semiconductor substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.
Claims10
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring;
- and
- forming a resist pattern by irradiating said resist film with exposing light, wherein said exposing light is selected from the group consisting of F2 laser beam, Kr2 laser beam, ArKr laser beam, and Ar2 laser beam for pattern exposure and developing said resist film with a developer after the pattern exposure.
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a resist material containing a base polymer including polystyrene in which at least one of hydroxyl groups substituted for hydrogen atoms at two or more portions of a benzene ring is replaced with a protecting group;
- and
- forming a resist pattern by irradiating said resist film with exposing light, wherein said exposing light is selected from the group consisting of F2 laser beam, Kr2 laser beam, ArKr laser beam, and Ar2 laser beam for pattern exposure and developing said resist with a developer after the pattern exposure.
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a resist material containing a copolymer of a compound including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring and a compound in which at least one of hydroxyl groups substituted for hydrogen atoms at two or more portions of a benzene ring is replaced with a protecting group;
- and
- forming a resist pattern by irradiating said resist film with exposing light, wherein said exposing light is selected from the group consisting of F2 laser beam, Kr2 laser beam, ArKr laser beam, and Ar2 laser beam for pattern exposure and developing said resist film with a developer after the pattern exposure.
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring;
- irradiating said resist film with exposing light, wherein said exposing light is selected from the group consisting of F2 laser beam, Kr2 laser beam, ArKr laser beam, and Ar2 laser beam for pattern exposure and forming an organic metal film in a surface region of an unexposed portion of said resist film after the pattern exposure;
- and
- forming a resist pattern from said unexposed portion of said resist film by etching said resist film with said organic metal film used as a mask.
Dependencies are inferred from the claim text.