Silicon carbide film and method for manufacturing the same
AssigneeHoya Corporation
InventorsYukitaka Nakano, Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara
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Abstract
There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.
Claims8
A silicon carbide film which comprises a step of a plurality of undulations entirely or partially formed on a single crystal substrate surface and extended parallel in one direction, and which has a structure subjected to epitaxial growth in a method such that a propagation orientation of a film inner surface defect can be limited in a specified crystal surface.
A silicon carbide film in which a crystal orientation is inherited on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow,
- said substrate surface being provided entirely or partially with a plurality of undulations extended parallel in one direction;
- silicon carbide being allowed to grow on the substrate surface.
Dependencies are inferred from the claim text.