Deposited film producing process, photovoltaic device producing process, and deposited film producing system

A process for producing photovoltaic devices, each said photovoltaic device having at least a substrate, a semiconductor layer and a transparent electrode;

• the transparent electrode for each said photovoltaic device being formed by a process comprising the steps of:
• setting a substrate having a semiconductor layer in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein;
• adjusting a device for monitoring emission intensity of discharge plasma without the presence of a reactive gas, such that the device remains at a constant set value for each said substrate set in the film-forming chamber;
• and
• after said adjusting, introducing at least a reactive gas into the film-forming chamber to form a transparent electrode on the substrate having a semiconductor layer by subjecting a rotating cylindrical target comprising an indium-tin alloy to sputtering, monitoring a rate of film deposition with a film thickness monitor and readjusting the device for monitoring emission intensity of discharge plasma by controlling the feed rate of the reactive gas to provide a constant pre-established deposition rate and form an indium-tin oxide transparent electrode on the substrate having the semiconductor layer, wherein the substrate is transferred by a roll-to-roll system.

A process for producing deposited films, each deposited film formed by a process comprising the steps of:

• setting a substrate in a film-forming chamber;
• introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein;
• adjusting a device for monitoring emission intensity of discharge plasma without the presence of a reactive gas, such that the device remains at a constant set value for each substrate set in the film-forming chamber when film deposition conditions are the same and although actual intensity of discharge plasma may vary;
• and
• after said adjusting introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a cylindrical target comprising an indium-tin alloy to sputtering, monitoring a rate of film deposition with a film thickness monitor and readjusting the device for monitoring emission intensity of discharge plasma by controlling the feed rate of the reactive gas to provide a constant pre-established film deposition rate and form an indium-tin oxide film on the substrate.

A process for producing photovoltaic devices, each said photovoltaic device having at least a substrate, a semiconductor layer and a transparent electrode;

• the transparent electrode for each said photovoltaic device being formed by a process comprising the steps of:
• setting a substrate having a semiconductor layer in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein;
• adjusting a device for monitoring emission intensity of discharge plasma without the presence of a reactive gas, such that the device remains at a constant set value for each said substrate set in the film-forming chamber when film deposition conditions are the same and although actual intensity of discharged plasma may vary;
• and
• after said adjusting introducing at least a reactive gas into the film-forming chamber to form a transparent electrode on the substrate having a semiconductor layer by subjecting a rotating cylindrical target comprising an indium-tin alloy to sputtering, monitoring a rate of film deposition with a film thickness monitor and readjusting the device for monitoring emission intensity of discharge plasma by controlling the feed rate of the reactive gas to provide a constant pre-established film deposition rate and form an indium-tin oxide transparent electrode on the substrate having the semiconductor layer.